The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 1994
Filed:
Jun. 04, 1993
Applicant:
Inventor:
Ji H Chung, Sungdongku, KR;
Assignee:
Hyundai Electronics Industries Co., Ltd., Kyoungkido, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437200 ; 437 29 ; 437 57 ; 437190 ; 148D / ; 148D / ;
Abstract
A method for fabricating titanium silicide contacts wherein prior to a Ti sputtering process, ions having a conductivity opposite to the conductivity of source and drain regions on each well are implanted in the source and drain regions by using the same mask as used in the Ti sputtering process, so as to form low concentration regions at contact surfaces and high concentration regions at regions beneath the contact surfaces.
Chung, Ji. (1994). Method for fabricating titanium silicide contacts (U.S. Patent No. 5369055). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5369055
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile