The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 1994
Filed:
Aug. 05, 1992
Applicant:
Inventors:
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 69 ; 437 70 ; 437 72 ;
Abstract
A method for forming LOCOS isolation regions which includes the steps of forming a polysilicon buffer layer between the pad oxide layer and the nitride layer and forming a sidewall seal around the perimeter of the active moat regions prior to the field oxidation step. The resulting field oxide isolation region has reduced oxide encroachment into the active moat region.