The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 29, 1994

Filed:

Feb. 28, 1994
Applicant:
Inventors:

Yukio Hanamoto, Toyonaka, JP;

Hiroshi Takagaki, Higashiosaka, JP;

Ayako Ida, Kobe, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03C / ;
U.S. Cl.
CPC ...
430270 ; 430281 ; 430910 ; 528502 ;
Abstract

This invention provides a process for producing a resist composition in which the content of relatively large undissolved particles is low just after production of the composition and the content of relatively large undissolved particles increases only to a small extent even if the composition is stored for a long period of time. Thus, this invention provides a process for producing a resist composition which comprises filtering a mixture of an alkali-soluble resin, a radiation-sensitive compound and a solvent by the use of a filter of which pore diameter is 0.1 .mu.m or below and of which particle-removing performance is 99% or above. Further, this invention provides also a resist composition comprising an alkali-soluble resin, a radiation-sensitive compound and an organic solvent not simultaneously having both acetoxy group and alkoxy group in its molecule, said composition containing undissolved particles having a particle diameter of 0.25 .mu.m or above in a number of 100 particles/ml or below, said undissolved particles being constituted of two particle groups one of which (the first group) has a particle diameter of 0.25-0.3 .mu.m and the other of which (the second group) has a particle diameter larger than 0.3 .mu.m, and the content of said first particle group having a particle diameter of 0.25-0.3 .mu.m being 50 particles/ml or below. According to the process of this invention, a resist composition excellent in storage stability, etc. can be obtained. By using said resist composition, the product yield in the production of integrated circuit can be improved.


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