The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 1994
Filed:
Apr. 21, 1993
Albert W Vinal, Cary, NC (US);
Michael W Dennen, Raleigh, NC (US);
Thunderbird Technologies, Inc., Research Triangle Park, NC (US);
Abstract
A Fermi-FET includes a Fermi-tub region at a semiconductor substrate surface, wherein the Fermi-tub depth is bounded between a maximum tub depth and a minimum tub depth. The Fermi-tub depth is sufficiently deep to completely deplete the Fermi-tub region by the substrate tub junction at the threshold voltage of the field effect transistor, and is also sufficiently shallow to produce a closed inversion injection barrier between the source region and the drain region below the threshold voltage of the Fermi-FET. High saturation current and low leakage current are thereby produced simultaneously. Source and drain injector regions and a gate sidewall spacer may also be provided.