The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 1994
Filed:
Apr. 07, 1993
Applicant:
Inventors:
Ernesto Perea, Gif sur Yvette, FR;
Daniel Delagebeaudeuf, Saclay, FR;
Assignee:
Thomson-CSF Semiconducteurs Specifiques, Puteaux, FR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257194 ; 257195 ; 257274 ;
Abstract
Disclosed is a system with at least two complementary transistors, having n and p channels but comprising a heterostructure of junctions between III-V group materials. In order to balance the threshold voltages in the two channels, namely the n (2DEG) and p (2DHG) channels, at least two p and n delta doped layers are included in two layers of the heterostructure, at levels included between the channels (2DEG, 2DHG) and the gate electrodes. The n delta doped layer is then removed by localized etching right above the p channel transistor. Application to fast logic circuits.