The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 1994
Filed:
Apr. 09, 1993
Applicant:
Inventors:
Assignee:
Fuji Xerox Co., Ltd., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257 66 ; 257 59 ; 257488 ;
Abstract
The invention is based on a thin-film semiconductor FET device. A field plate electrode for producing an electric field is formed on a channel-protecting film above the end of the gate electrode that is on the side of an offset region. Stable transistor characteristics can be maintained for a long time with the field plate electrode voltage set to a low value. The drain electrode is coated with a film of an anticorrosion metal. Where an integrated circuit with a high device density is fabricated from semiconductor devices of this construction, the drain electrodes are effectively prevented from being corroded.