The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 1994
Filed:
Nov. 12, 1992
Applicant:
Inventors:
Hisatoshi Mori, Hachioji, JP;
Syunichi Sato, Kawagoe, JP;
Naohiro Konya, Hino, JP;
Ichiro Ohno, Hachioji, JP;
Hiromitsu Ishii, Tokorozawa, JP;
Kunihiro Matsuda, Sagamihara, JP;
Junji Shiota, Tachikawa, JP;
Assignee:
Casio Computer Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257 59 ; 257770 ; 257771 ; 359 87 ;
Abstract
A thin-film transistor comprises a gate electrode formed on an insulating substrate, a gate insulating film covering the gate electrode and the insulating substrate, an i-type semiconductor layer formed on the gate insulating film, and a source electrode and a drain electrode electrically connected to two ends of the i-type semiconductor layer, respectively. The gate electrode is made of aluminum alloy containing high-melting-point metal such as Ti and Ta and oxygen or nitrogen or both.