The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 1994
Filed:
Jan. 07, 1993
Kiyotaka Sato, Fukushima, JP;
Kenji Togura, Fukushima, JP;
Clarion Co., Ltd., Tokyo, JP;
Abstract
A semiconductor substrate is coated with an insulation mask. A window is cut in the mask using photolithography leaving stress risers at locations defining the length of a laser cavity. A plurality of layers of semiconductor film are selectively grown over the exposed substrate to form a pin diode and necessary impurities are injected. An intrinsic layer of the film forms a laser excitation layer and emits laser beams in response to excitation. Following heat treatment, the device is cooled rapidly, causing stress in the areas where the stress risers from the mask join the semiconductor film. By the time the device reaches room temperature, the semiconductor film is split and separated by cleavage planes. Alignment of the semiconductor laser device output beams is produced by anisotropic etching of the cleavage planes to form 45.degree. mirror planes. Conventional photolithographic techniques permit formation of the laser resonator with an accuracy on the order of submicrons.