The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 1994
Filed:
Jun. 16, 1992
Applicant:
Inventors:
James A Cooper, Jr, West Lafayette, IN (US);
Michael R Melloch, West Lafayette, IN (US);
Theresa B Stellwag, West Lafayette, IN (US);
Assignee:
The United States of America as represented by the Secretary of the Navy, Washington, DC (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
365174 ; 365149 ; 365177 ; 365180 ; 257 76 ; 257110 ; 257187 ; 257197 ; 257198 ;
Abstract
A vertically integrated DRAM cell having a storage time of at least 4.5 hours at room temperature, formed from a wide-bandgap semiconductor such as GaAs or AlGaAs, in which an n-p-n bipolar access transistor is merged with a p-n-p storage capacitor, with the middle p-n layers being common to both. Similarly, a p-n-p transistor can be merged with an n-p-n storage capacitor.