The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 1994

Filed:

Aug. 19, 1991
Applicant:
Inventors:

Tetsuya Matsumura, Hyogo, JP;

Shinichi Uramoto, Hyogo, JP;

Masahiko Yoshimoto, Hyogo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365154 ; 365104 ; 365156 ;
Abstract

Each of memory cells of a semiconductor memory device comprises a transistor connected between a node and a node, a transistor connected between the node and a node, a transistor connected between a node and a node, and a transistor connected between node and a node. Each of the nodes is connected to either of a first potential line and a second supply line in a program unit when it is manufactured, and each of the nodes is connected to either of the first and the second ground lines in a program unit when it is manufactured. A supply potential is supplied to the first supply line, and the supply potential or the ground potential is selectively supplied to the second supply line. The ground potential is supplied to the first ground line, and the ground potential or the supply potential is selectively supplied to the second ground line.


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