The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 1994
Filed:
Jul. 20, 1993
Applicant:
Inventor:
Ichiro Tonai, Osaka, JP;
Assignee:
Sumitomo Electric Industries, Ltd., Osaka, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01C / ;
U.S. Cl.
CPC ...
257434 ; 257435 ;
Abstract
A bottom-incidence type photo-sensing device has a pn junction, as a photo-sensing region, formed by selectively providing a first region of a second conductivity type in a portion of a semiconductive layer of a first conductivity type. The first region is surrounded by a second region of the second conductivity type formed in the semiconductive layer, and the second region is of the same or larger depth as or that of the first region. Even when light is directed to outside of the photo-sensing region, extra charges generated therein are absorbed by the second region and the flow of extra charges into the photo-sensing region is prevented.