The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 1994
Filed:
May. 12, 1992
Applicant:
Inventor:
Kouji Taniguchi, Shiki, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257296 ; 257295 ; 257306 ; 257310 ;
Abstract
A semiconductor device comprising a capacitor which comprises a lower electrode, a dielectric insulating film of a metal oxide, and a upper electrode. The lower electrode is made of at least yttrium (Y) or hafnium (Hf).
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Taniguchi, Kouji. (1994). Thin film capacitive memory device with a high dielectric constant (U.S. Patent No. 5365096). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5365096
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile