The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 1994
Filed:
Oct. 04, 1993
Applicant:
Inventors:
Kazuo Hayashi, Itami, JP;
Takuji Sonoda, Itami, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257 24 ; 257284 ; 257286 ; 257653 ; 257773 ;
Abstract
A semiconductor device includes a semiconductor substrate and channel and electron supply layers epitaxially grown on the semiconductor substrate. Source, drain, and gate electrodes are disposed on the electron supply layer. At least the gate electrode and the electron supply layer are structured such that an electron gas within the channel layer is one-dimensional to prevent scattering of electrons in the channel layer.