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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 5364809 B1

PDFFull Text
Date of Patent:
Nov. 15, 1994

Filed:

Jul. 01, 1991

Method of fabricating a capacitor for a dynamic random access memory cell

Applicant:
Inventors:

Oh-Hyun Kwon, Seoul, KR;

Taek-Yong Jang, Seoul, KR;

Joong-Hyun Shin, Seoul, KR;

Kyoung-Seok Oh, Seoul, KR;

Assignee:

SamSung Electronics Co., Ltd., Suwon, KR;

Attorney:

Bushnell; Robert E.

Primary Examiner:

Olik Chaudhuri

Assistant Examiner:

H Jey Tsai

Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 52 ; 437 60 ; 437919 ;
Abstract

A method of fabricating a multi-chamber type DRAM cell capacitor having high capacitance within a limited area. A first concave area (54) of the storage electrode (72) is formed by means of an oxide film (46) as a scarifying layer. An insulating spacer (58) is formed in the first concave area (54). Then, first and second conduction layers (48, 60) are formed on the substrate (26) and top portions of the conduction layers are removed consecutively, so as to form a capacitor having a plurality of concave areas.

Find Patent Forward Citations

Kwon, Oh-Hyun. (1994). Method of fabricating a capacitor for a dynamic random access memory cell (U.S. Patent No. 5364809). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5364809

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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