The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 1994
Filed:
Sep. 30, 1993
Alastair M Glass, Rumson, NJ (US);
Neil E Hunt, Scotch Plains, NJ (US);
John M Poate, Summit, NJ (US);
Erdmann F Schubert, New Providence, NJ (US);
George J Zydzik, Columbia, NJ (US);
AT&T Bell Laboratories, Murray Hill, NJ (US);
Abstract
Absorption properties of an optically active medium can be changed drastically by a Fabry-Perot microcavity. Optically active medium of the cavity includes a host material which is not optically active and at least one rare earth ion which provides optical activity to the medium. The Fabry-Perot cavity is designed to be resonant with excitation wavelength of an absorption band of the host material. The excitation is provided by a source of radiation positioned such that the radiation impinges on the cavity at an angle within a range of from zero to less than 90 degrees from the normal to the top surface of the cavity. In one embodiment Er-implanted SiO.sub.2 is used as the optically active medium. SiO.sub.2 :Er has an absorption band at 980 nm and an emission band at 1.55 .mu.m due to 4f intra-atomic transitions of Er.sup.3+ ions. The Fabry-Perot cavity is designed to be resonant with the 980 nm absorption band of SiO.sub.2 :Er. The efficiency of the cavity structure is much higher as compared to a no-cavity structure, while the spectral features of the active SiO.sub.2 :Er emission are unaltered. The structure can be used for optically pumped semiconductor devices, such as optical amplifiers or lasers, which could be operated with a higher overall efficiency.