The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 1994
Filed:
Nov. 18, 1992
Applicant:
Inventors:
Akihiko Kasukawa, Tokyo, JP;
Toshio Kikuta, Fujisawa, JP;
Assignee:
The Furokawa Electric Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S / ;
U.S. Cl.
CPC ...
372 45 ; 372 43 ;
Abstract
A strained quantum well type semiconductor laser device is disclosed to comprise a plurality of layers including a quantum well active layer formed on a semiconductor substrate characterized in that tensile strained quantum well layers and compression strained barrier layers are stacked alternately to form said quantum well active layer and the quantum well layers are made of either InGaAs or InGaAsP and InP, when the semiconductor substrate is made of InP, InGaP or GaAs, respectively.