The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 1994
Filed:
Apr. 25, 1994
Eric N Cartagena, Chula Vista, CA (US);
The United States of America as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
A method is provided for manufacturing a bipolar transistor, comprising the teps of: 1) abutting a polished surface of a substantially single crystal silicon wafer with a polished surface of an insulating substrate; 2) heating the abutting silicon wafer and insulating substrate at about 200.degree. C. for about 30 minutes to form a bonded wafer having a silicon layer; 3) forming a silicon island from the silicon layer; 4) ion implanting a first dopant species having a first conductivity into the silicon island to form a base region in the silicon island; 5) ion implanting a second dopant species having a second conductivity opposite the first conductivity into the silicon island to form an emitter region and a collector region in the silicon island; 6) ion implanting a third dopant species having the first conductivity into the base region of the silicon island; 7) heating the bonded wafer at a temperature of about 800.degree. C. to activate the first, second, and third dopant species and to repair ion implanting damage to the silicon island; 8) forming electrical contacts to the base, emitter, and collector regions; and 9) forming an oxide layer over the electrical contacts to passivate the electrical contacts.