The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 01, 1994

Filed:

Aug. 31, 1992
Applicant:
Inventor:

Kiyoshi Ohta, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K / ;
U.S. Cl.
CPC ...
327427 ; 327543 ;
Abstract

In a consumption power controlling apparatus for a GaAs FET amplifier, even when a consumption power is controlled, the changes respectively in the gain, the phase, and the deviation of gain within a band can be minimized in a satisfactory manner. There are disposed resistor means arranged between first power source means and a drain region of a GaAs FET and variable resistor means having an adjusting member and being arranged between output terminals respectively of the first power source means and variable voltage means. The adjusting member is connected to a gate region of the GaAs FET. There is also disposed control means having two input terminals between which the resistor means to supply a control signal to the variable voltage means so as to control a voltage developed across the resistor means to be substantially equal to a predetermined reference value, thereby obtaining a fixed drain current of the FET.


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