The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 1994
Filed:
Sep. 30, 1992
Fumiaki Kirihata, Kanagawa, JP;
Fuji Electric Co., Ltd., Kanagawa, JP;
Abstract
A semiconductor device comprises a semiconductor substrate of a first conductive type with a low impurity density; a first region of a second conductive type; a second region of the first conductive type with a high impurity density formed in a surface of the first region; a third region of the second conductive type with a high impurity density; a gate insulating film formed on the surface of the first region intervening between an exposed surface of the semiconductor substrate and the second region; a gate electrode formed on the gate insulating film; a fourth region of the second conductive type opposite to the first region on the other surface of the semiconductor substrate; a fifth region of the first conductive type with a high impurity density which is opposite to the third region and adjacent to the fourth region; a first electrode commonly brought into contact with the first and second regions; a second electrode brought into contact with the second region and connected to the first electrode; and a third electrode commonly brought into contact with the fourth and fifth regions.