The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 1994
Filed:
Jun. 17, 1992
George W Webb, Del Mar, CA (US);
Innova Laboratories, Inc., San Diego, CA (US);
Abstract
A non-mechanical beam deflector forms and scans a beam of millimeter wave (MMW) radiation at a rapid rate. The beam deflector includes a semiconductor body in which a spatially varying density of charge carriers is selectively injected. The injected charge carriers--electrons and/or holes--alter the dielectric constant of the semiconductor body locally and thereby attenuate and reflect incident MMW radiation. The portions of the semiconductor body that do not have carriers injected therein allow the incident MMW radiation to be transmitted. The semiconductor body, modified with a spatially varying density of charge carriers, diffracts the radiation which passes through it into a beam. The beam may be scanned across space through selective control of the injected charge carriers. The diffractive conditions can be rapidly re-configured. The spatially varying density of charge carriers may be induced optically into the semiconductor body, or directly injected using opposing p- and n-type contacts forming a p-n junction. A dynamically variable Fresnel zone plate (FZP) represents one application of the invention.