The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 1994
Filed:
Apr. 02, 1993
Didier Pribat, Sevres, FR;
Bruno Gerard, Chelles, FR;
Thomson-CSF, Puteaux, FR;
Abstract
The disclosure relates to the field of monocrystalline thin layers deposited on a substrate having an identical or a different nature, from a vapor phase. On the substrate made of monocrystalline material A, a cavity is built, determined by one face of the substrate and one face of a layer made of a material D in such a way that there can be neither nucleation nor growth on the faces exposed to the vapor phase. The growth is done from a seed made of monocrystalline material B located between two faces of the substrate and of the layer. The seed made of monocrystalline material B may be of a nature different from that of the substrate (for example, substrate=silicon and material B=GaAs) and is made, for example, by MBE or MOCVD. The material C to be made to grow is different from the material B of the seed. The material C is, for example, InP and the growth is done by VPE.