The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 1994
Filed:
Dec. 10, 1993
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A semiconductor structure with germanium implant is provided for reducing V.sub.T shifts at the channel edges thereby minimizing short channel effects and subthreshold currents at or near the substrate surface. The semiconductor structure is adapted to receive non-perpendicular implant of germanium in the juncture between the channel and the source/drain regions as well as in the juncture between field oxide channel stop implant and source/drain regions. By carefully and controllably placing the germanium at select channel and field regions, segregation and redistribution of threshold adjust implant and channel stop implant dopant materials is substantially minimized. Reducing the redistribution of such materials provides a reduction in the short channel effects and, particularly, a reduction in substrate surface current or DIBL-induced current.