The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 1994
Filed:
Apr. 29, 1993
Applicant:
Inventors:
Ismail T Emesh, Cumberland, CA;
David R McDonald, Ottawa, CA;
Assignee:
Northern Telecom Limited, Montreal, CA;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 60 ; 437201 ; 437919 ;
Abstract
A method is provided for forming a conductive layer of ruthenium oxide layer RuO.sub.2. The RuO.sub.2 layer is formed from a coating of a precursor solution comprising a ruthenium (III) nitrosyl salt,subsequent heat treatment, and annealing at low temperature. The resulting layer of a tetragonal phase of crystalline ruthenium oxide is suitable for formation thereon of a perovskite structure ferroelectric material for applications in ferroelectric non-volatile memory cells. The chloride free process is compatible with processing for submicron device structures for bipolar, CMOS or bipolar CMOS integrated circuits.