The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 1994
Filed:
Aug. 12, 1993
Applicant:
Inventors:
Wayne R Burger, Phoenix, AZ (US);
Yee-Chaung See, Phoenix, AZ (US);
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 32 ; 437 31 ; 437162 ; 437152 ; 437154 ; 148D / ; 148D / ;
Abstract
A lateral bipolar transistor (10) includes a retrograde doping profile (21) that is formed within a substrate (11) to form the transistor's (10) collector region (14). A base region (16) that includes an inactive base area and an active base area (17) is formed in the collector region (14). An emitter (18) is formed within the active base area (17) wherein current (22) flows through the emitter (18) through the active base area (17) and through the collector region (14). The base region, the emitter, and a collector contact region are all formed by driving dopants from an overlying polysilicon layer.