The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 1994
Filed:
Mar. 15, 1993
Shozo Shirota, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
For directly observing from the outside the electrical characteristics of a memory cell, i.e., a voltage-current characteristic and threshold voltage in a non-volatile semiconductor memory device, there are provided same bit train selector means 5 for selecting and switching on a plurality of bit train selecting FETs(QB.sub.o, QB.sub.1. . . , QB.sub.n) each for interconnecting an external terminal 4 to which arbitrary voltage is applied and respective memory cell arrays 1a, 1b, . . . , 1n with each other and forming a current path extending from a specific memory cell FET (Q.sub.1) on the same bit train memory cell array to the external terminal, and a power supply circuit for supplying variable voltage to a gate of the specific memory cell FET (Q.sub.i). Hereby, there are improved the yield of articles and the accuracy of failure article analyses.