The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 1994
Filed:
Mar. 05, 1993
Applicant:
Inventor:
Nagesh Challa, Sunnyvale, CA (US);
Assignee:
Nexcom Technology, Inc., Sunnyvale, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365185 ; 365149 ; 365182 ;
Abstract
A single-transistor non-volatile memory cell MOS transistor with a floating gate and a control gate using two levels of polysilicon and a tunnel dielectric that overlaps the drain area wherein a tunneling of charge can take place between the drain and the floating gate by means of a system of applied voltages to the control gate and drain.