The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 1994
Filed:
Nov. 19, 1992
Applicant:
Inventor:
Jean Jimenez, Voiron, FR;
Assignee:
SGS-Thomson Microelectronics S.A., Saint-Genis Pouilly, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257173 ; 257175 ; 257355 ; 257373 ; 257547 ; 257603 ;
Abstract
A MOS transistor is formed in a first low-doped P-type retion coating a second more highly doped P-type region. The transistor comprises an N-type drain region, an N-type source region, and a region contacting the for region. The drain, cource and contacting regions are formed at the surface of the first region. The source and contacting regions are interconnected. An N-type highly doped region extends from the drain region through the first low-doped P-type region to the second more highly doped P-type region.