The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 1994
Filed:
Feb. 19, 1993
Kang L Wang, Santa Monica, CA (US);
Jin S Park, Gardena, CA (US);
Board of Regents of the University of California, Oakland, CA (US);
Abstract
Carrier mobility in a heterojunction field effect device is increased by reducing or eliminating alloy scattering. The active channel region of the field effect device uses alternating layers of pure silicon and germanium which form a short period superlattice with the thickness of each layer in the superlattice being no greater than the critical thickness for maintaining a strained heterojunction. The gate contact of the field effect device can comprise quantum Si/Ge wires which provide quantum confinement in the growth plane, thereby allowing the field effect device to further improve the mobility by restricting phonon scattering. The structure can be used to improve device speed performance.