The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 1994
Filed:
Apr. 05, 1993
Papu D Maniar, Austin, TX (US);
Faivel S Pintchovski, Austin, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
The present invention includes a process for forming an intermetallic layer over a semiconductor substrate and a device formed by the process. The intermetallic layer includes a material having a molecular formula of AB.sub.3, wherein A is an element having an atomic number of 39-41 or 57-73 and B is an element having an atomic of 45, 46, 77, or 78. In one process, an intermetallic member is formed by forming a patterned layer including the A or B element over a substrate, depositing a layer of the other element, and reacting them. The process forms a self-aligned member. Chemical-mechanical polishing, ion milling, and a lift-off method may be performed to pattern an AB.sub.3 intermetallic layer. In a device, an intermetallic member may act as a gate electrode, an electrode of a capacitor, a conductive spacer, an interconnect, or a contact or via plug. An almost endless number of devices may be formed with the intermetallic members.