The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 1994
Filed:
Feb. 21, 1992
Harvey C Nathanson, Pittsburgh, PA (US);
Richard J Ravas, Penn Twp., Westmoreland County, PA (US);
Westinghouse Electric Corp., Pittsburgh, PA (US);
Abstract
Push-pull complimentary MOSFET devices are formed in a thin active layer between the top surface of a high resistivity silicon wafer and a insulating layer implanted below the top surface. Each MOSFET is composed of a plurality of cells each having a source, a gate, and a drain region extending fully through the active layer. Grooves extending through the wafer are lined with vias which connect the source regions with a floating ground plane on the bottom of the wafer. The gates of all the cells are connected by a gate bus on the top surface. Air bridges spanning the gates and the source vias connect the drain conductors of each cell. Neutralizing capacitors connected between an input and an opposite output of the push-pull complimentary MOSFET devices match the parasitic capacitances of the devices and provide wide bandwidth amplification with roll off well into the GHz range without the need for tuning inductors.