The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 1994
Filed:
Jul. 14, 1993
Applicant:
Inventor:
Osamu Takata, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257408 ; 257344 ; 257345 ; 257400 ;
Abstract
Insulated Gate Field Effect Transitor (IGFET) having a reduced channel length without deteriorating an electric field relief effect includes a channel stop, located below a channel region, having a peak impurity concentration. A depth of the peak impurity concentration from the substrate surface is deeper than a bottom surface of source and drain regions that provides an Lightly Doped Drain structure.