The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 1994
Filed:
Jul. 14, 1993
Rudolph H Dyck, Palo Alto, CA (US);
Loral Fairchild Corporation, Syosset, NY (US);
Abstract
The disclosure describes one unit cell of a PNPN photoswitch array for an image sensor, including a PNPN light-activated thyristor (LAT), in the form of a two-terminal device, and a load FET. The FET functions as a load and as an on-off switch in series. The output of is a voltage at a first n node that controls the FET switch that connect a voltage-ramp input line to a capacitor and a diode that are connected in parallel. The other side of the diode is the input source of the unit cell that feeds charge into a vertical CCD analog shift register. At the start of a cycle of operation, such as the beginning of a sweep of a radiation beam and prior to a pulse of a target reflection pulse, being directed onto the pnpn photoswitch, the voltage level at the first node is high. At the time when a pulse of radiation is directed onto the photoswitch the first node goes low turning the switching transistor off. The capacitor has a charge level at an analog value representative of the elapsed time between the beginning of the cycle, such as the beginning of a radiation beam sweep, an the occurrence of the pulse reflected from a target. At the end of a cycle the charge is transferred into a CCD readout register.