The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 1994
Filed:
Jul. 08, 1993
Applicant:
Inventors:
Assignee:
Commissariat a l'Energie Atomique, Paris, FR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437182 ; 437195 ; 437203 ; 156651 ;
Abstract
Process for producing an integrated circuit stage formed from a dielectric layer (1) covering interconnection lines (5) and connection points (4), which connect the said lines (5) to conductive parts (6) on the opposite side of the dielectric layer (1). The process consists of forming all the dielectric layer (1) during a single step and then successively etching cavities at the locations of the connection points and the interconnection lines by means of two successively positioned masks and then filling the cavities in a single step with conductive material in order to simultaneously form connection points (4) and interconnection lines (5).