The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 11, 1994

Filed:

Nov. 09, 1993
Applicant:
Inventors:

Jonathan D Chapple-Sokol, Poughkeepsie, NY (US);

Seshadri Subbanna, Hopewell Junction, NY (US);

Manu J Tejwani, Yorktown Heighs, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437106 ; 437110 ; 437127 ; 437131 ; 437905 ; 437-2 ; 437-3 ; 148D / ;
Abstract

A semiconductor light emitting/detecting device has a first doped silicon layer, an intrinsic silicon epitaxial layer formed on the first doped silicon layer, at least one quantum dot embedded within the intrinsic silicon epitaxial layer, and a second doped silicon layer formed on the second intrinsic silicon epitaxial layer.


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