The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 1994
Filed:
Oct. 13, 1993
Ernest L Cheung, Cupertino, CA (US);
Patty H Tsai, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A process for selectively etching a substrate 20 having a molybdenum silicide layer 25 with a resist material 26 on portions of the molybdenum silicide layer 25 is described. The substrate 26 is placed into an etch zone 54 and the process gas comprising SF.sub.6 and HBr is introduced into the etch zone 54. Preferably, the volumetric flow ratio of SF.sub.6 :HBr is from about 1:10 to about 1:1, and more preferably, an oxygen containing gas such as O.sub.2 is added to the process gas. A plasma is generated in the etch zone 54 to form an etch gas from the process gas that anisotropically etches the MoSi.sub.x layer 25 with good selectivity and reduced profile microloading.