The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 04, 1994

Filed:

Sep. 17, 1992
Applicant:
Inventor:

Koichi Ohta, Saitama, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01F / ; H01F / ;
U.S. Cl.
CPC ...
257 38 ; 257110 ; 257111 ; 257112 ; 257173 ;
Abstract

A thyristor type surge suppressor includes a P-type semiconductor substrate, an N-type first semiconductor layer provided in one surface of the semiconductor substrate, an N-type second semiconductor layer provided in the other surface of the semiconductor substrate, a P-type third semiconductor layer formed in the N-type first semiconductor layer so as to provide a plurality of first exposed regions of the N-type first semiconductor layer, a P-type fourth first semiconductor layer formed in the N-type second semiconductor layer so as to provide a plurality of second exposed regions of the N-type second semiconductor layer, a first electrode provided over the P-type third semiconductor layer and the of N-type first exposed regions, and a second electrode provided over the P-type fourth semiconductor layer and the N-type second exposed regions. In such a structure, the N-type first and second exposed regions are disposed so as to be opposed to the P-type fourth semiconductor layer and the P-type third semiconductor layer, respectively.


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