The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 1994
Filed:
Nov. 17, 1993
Applicant:
Inventor:
Takashi Hosaka, Tokyo, JP;
Assignee:
Seiko Instruments Inc., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 67 ; 437 69 ; 437 72 ; 437 73 ; 437947 ; 148D / ;
Abstract
Steps or grooves are formed in a surface of a semiconductor substrate of a semiconductor device having a plurality of semiconductor elements, and an isolation Layer is formed on regions that include the steps or side walls of the grooves.
Hosaka, Takashi. (1994). Method for making a semiconductor device having an isolated layer region (U.S. Patent No. 5352626). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5352626
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile