The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 1994
Filed:
Nov. 29, 1991
Applicant:
Inventor:
Tadahide Hoshi, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 67 ; 437 62 ; 437 68 ; 437 64 ; 437974 ; 148D / ;
Abstract
In manufacturing a semiconductor substrate having a dielectric isolation structure, a dielectric film is formed at a semiconductor layer formed by epitaxial growth. Grooves for carrying out dielectric isolation to deposit filler thereon thereafter are used to polish the deposited filler. The polishing condition is obeyed where polishing rate ratio of the filler to the dielectric film is one fifth or less. Thus, an active semiconductor layer in which where elements are to be formed can be provided with good productivity, state where the flatness thereof is good and the layer thickness is uniformly and precisely controlled.