The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 1994
Filed:
Jan. 21, 1993
Hiroyuki Miwa, Kanagawa, JP;
Norikazu Ouchi, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A lateral bipolar transistor including a transistor forming region provided on an insulating substrate; a first impurity diffusing region provided on the insulating substrate on one side of the transistor forming region; an emitter region formed in a first portion of the transistor forming region adjacent to the first impurity diffusing region, the emitter region being formed by diffusing a first conduction type of impurity from the first impurity diffusing region into the first portion of the transistor forming region; a base region formed in a second portion of the transistor forming region adjacent to the emitter region, the base region being formed by diffusing a second conduction type of impurity from the first impurity diffusing region into the second portion of the transistor forming region; and a collector region formed in a third portion of the transistor forming region adjacent to the base region. Accordingly, a base width can be reduced, and a dimensional accuracy of the base width can be improved.