The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 1994
Filed:
Apr. 21, 1993
Masaaki Maehara, Ohme, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
Technology capable of simultaneously improving the state of filling in connection holes and the reliability of a wiring material in a bipolar semiconductor device or in a bipolar CMOS device. At least a tungsten film formed by the CVD method is included in a first wiring layer that accomplishes electrical conduction among the semiconductor elements by depositing an electrically conducting film on the connection holes formed in an insulating film deposited on the main surface of a semiconductor substrate. The tungsten film formed by the CVD method helps improve the state of filling in connection holes or deposition property, and enables the connection holes to be formed highly reliably. By using a tungsten film, furthermore, it is allowed to increase the resistance against electromigration of the wiring and to enhance reliability.