The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 1994
Filed:
Aug. 25, 1992
Applicant:
Inventors:
Michael P Brassington, Sunnyvale, CA (US);
Andreas G Papaliolios, Sunnyvale, CA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257295 ; 257306 ; 437 52 ; 437 60 ; 437192 ; 437919 ;
Abstract
A ferroelectric memory cell architecture in which a pair of cells is fabricated so as to share common elements, and wherein ferroelectric capacitors are fabricated overlying the associated select transistors, thereby achieving a small-area cell architecture. First level refractory metal interconnects formed prior to ferroelectric material deposition steps are utilized with subsequently formed second metallization layers to provide interconnections between the ferroelectric capacitor plates and the underlying transistor regions.