The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 1994
Filed:
Jul. 16, 1993
Yoshiteru Omura, Seto, JP;
Kouji Tsukada, Seto, JP;
Yutaka Nonomura, Nagoya, JP;
Takeshi Morikawa, Aichi, JP;
Kabushiki Kaisha Toyota Chuo Kenkyusho, Aichi, JP;
Abstract
A force transducer comprising: a silicon semiconductor having a crystal face of (110); a pair of input-output shared electrodes mounted on the crystal face of the silicon semiconductor in mutual confronting relationship in a direction of <110> of the crystal or a direction equivalent to the direction of <110>; a force transmission block connected to the crystal face of the silicon semiconductor for transmitting a force W perpendicularly to the crystal face; and a support bed supporting the silicon semiconductor and connected to the silicon semiconductor at a face opposite to the crystal face to which the force transmission block is connected, whereby a voltage corresponding to the force W and to be measured is output from the input-output shared electrodes when the force W is applied perpendicularly to the crystal face of the silicon semiconductor via the force transmission block while a current flows in the silicon semiconductor via the input-output shared electrodes.