The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 1994
Filed:
Apr. 16, 1993
Engin Molva, Grenoble, FR;
Roger Accomo, Le Versoud, FR;
Guy Feuillet, St. Martin d'Uriage, FR;
Joel Cibert, St. Nazaire les Eymes, FR;
Dang Le Si, Montbonnot, FR;
Claire Bodin-Deshayes, Grenoble, FR;
Commissariat a l'Energie Atomique, Paris, FR;
Abstract
A semiconductor heterostructure laser cavity is disclosed which has semiconductor layers epitaxied to define four zones on a substrate. The laser cavity includes a first zone with a composition that varies continuously from a first face to a second face with a gap decreasing from the first face to the second face, the first zone ensuring an optical confinement and light guidance. A second zone constitutes an active emission zone in contact with the second face of the first zone and having at least one quantum well with a gap smaller than that of the first zone. A third zone has a gap larger than that of the at least one quantum well. The third zone ensuring an optical confinement and a light guidance, and having a composition which varies continuously from a first face to a second face with a gap which increases from the first face to the second face, the first face of the third zone being in contact with the active emission zone. A fourth zone constitutes a buffer zone which contacts the second face of the third zone and a substrate, the fourth zone serving as an optical barrier for light guiding, the first and third zones being asymmetrical with respect to the active emission zone to define an asymmetrical GRINSCH structure, one of the first and third zones constituting a surface of the semiconductor heterostructure for ensuring electron excitation and creation of electron-holes.