The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 1994
Filed:
Jul. 28, 1992
Applicant:
Inventor:
Koichi Ando, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01G / ; H01L / ;
U.S. Cl.
CPC ...
361322 ; 361313 ; 427 79 ; 257532 ; 437 60 ;
Abstract
A semiconductor device has a capacitor insulating film composed of a first and a second silicon nitride film. The surface of a lower electrode of impurity-doped polysilicon is transformed into the first silicon nitride film by thermal nitriding, and thereafter the second silicon nitride film is formed by chemical vapor deposition. An upper electrode is formed on the second silicon nitride film. A silicon oxide film may be formed on the second silicon nitride film by thermal oxidation. The capacitor insulating film which has a thickness of 5 nm or less in equivalent thickness of an oxide film reduces a leakage current and improves a long-term product reliability.