The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 1994
Filed:
Nov. 05, 1993
Applicant:
Inventors:
Assignee:
Shin Etsu Handotai Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257 79 ; 257101 ; 257102 ; 257103 ;
Abstract
To obtain a GaP light emitting element substrate which provides GaP light emitting diodes with less luminance dispersion and high brightness. A GaP light emitting element substrate comprising an n-type GaP buffer layer, an n-type GaP layer and a p-type GaP layer layered one after another on an n-type GaP single crystal substrate, wherein the oxygen concentration in said n-type GaP buffer layer is kept at 6.times.10.sup.15 [atoms/cc] or less.