The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 1994
Filed:
Aug. 21, 1992
Applicant:
Inventors:
Akitsu Ayukawa, Nara, JP;
Shigeo Onishi, Nara, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 44 ; 437 41 ; 437 29 ; 437238 ; 437247 ;
Abstract
A process for manufacturing a semiconductor device, including the steps of: forming a oxide film over the entire surface of a semiconductor substrate formed with a gate electrode having side walls on opposite sides thereof with intervention of a gate oxide film, followed by implanting an impurity into a predetermined region; subjecting the substrate to a first heat treatment; removing the oxide film existing in the predetermined region; and subjecting the substrate to a second heat treatment in an ammonia or oxygen gas atmosphere.