The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 1994
Filed:
Nov. 09, 1993
Martin N Wybourne, Eugene, OR (US);
Doran D Smith, Brick, NJ (US);
Stephen M Goodnick, Corvallis, OR (US);
Jong-Ching Wu, Eugene, OR (US);
Chris Berven, Eugene, OR (US);
The United States of America as represented by the Secretary of the Army, Washington, DC (US);
Abstract
The present invention (or multi-terminal lateral hot-electron transistor, ET) is based on a high electron mobility (hot-electron) transistor with a split-gate arrangement similar to those used in quantum wave guide devices. In the present invention, the depletion below the split gate is used to form, and control, potential barriers between the source and drain contacts. The devices, according to the present invention, exhibit pronounced SNDC which is controlled by the gate bias.