The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 1994
Filed:
May. 03, 1993
Applicant:
Inventors:
Assignee:
Siemens Aktiengesellschaft, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437228 ; 437231 ; 437948 ; 156646 ; 156649 ; 1566591 ;
Abstract
Method for the electrical insulation of a function element on a semiconductor component, wherein the function element is etched into a mesa (9) using a mask (8). A dielectric (10) is then applied surface-wide at least up to the height of the mesa (9). The more deeply disposed portions of this dielectric layer are covered with photoresist (11), and the photoresist (11) is caused to flow by tempering and, thus, is caused to level the surface. Finally, the photoresist (11) and the dielectric (10) are re-etched with the same etching rate until the mesa is uncovered.