The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 1994
Filed:
Mar. 29, 1993
Applicant:
Inventor:
Kent D Choquette, Albuquerque, NM (US);
Assignee:
AT&T Bell Laboratories, Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S / ;
U.S. Cl.
CPC ...
372 45 ; 372 46 ; 372 96 ; 372 99 ;
Abstract
Applicant has demonstrated that by appropriately shaping the laser gain region one can control the polarization direction of semiconductor vertical cavity lasers and enhance their transverse mode selectivity. Specifically, configuring the transverse cross section to regions have a length-to-width ratio in excess of 1.2 favors emission with polarization in the long dimension at the fundamental mode. A cruciform structure favors emission with switchable orthogonal polarization. The transverse shape can be configured by dry etching a particular cavity shape in index guided lasers or by forming a shaped ion implantation region around gain guided lasers.