The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 1994
Filed:
Sep. 13, 1993
Takashi Kan, Saitama, JP;
Masaru Wakatabe, Saitama, JP;
Mitsugu Tanaka, Saitama, JP;
Shinji Kunori, Saitama, JP;
Akira Sugiyama, Saitama, JP;
Shindengen Electric Manufacturing Co., Ltd., Tokyo, JP;
Abstract
A semiconductor rectifier having a high breakdown voltage and a high speed operation is provided, which comprises a semiconductor substrate including a first semiconductor layer of one conductivity type and a second semiconductor layer of one conductivity type provided on the first semiconductor layer, a third semiconductor layer of an opposite conductivity type having a depth D and formed in the second semiconductor layer to provide a pn junction therebetween, the third semiconductor layer defining a plurality of exposed regions of the second semiconductor layer, each of the plurality of exposed regions of the second semiconductor layer having a width W, a relation between the depth D and the width W being given by D.gtoreq.0.5W, and a metal electrode provided on the substrate surface.